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De - Pt
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tolerant
exact
1 error
approximate
w/o phonetic transcr.
engl. phonetic transcr.
biozid
biozönologisch
biozönotisch
biphonisch
bipolar
bipolare Störung
bipolare affektive Störung
biquadratisch
birkenartig
Search for:
ä
ö
ü
ß
17 results for
bipolar
|
bipolar
Word division: bi·po·lar
Tip:
See also our word lists for special subjects
.
German
English
Diese
weltgeschichtlichen
Ereignisse
haben
in
einem
sehr
kurzen
Zeitraum
zwischen
1989
und
1991
die
Koordinaten
zeitgeschichtlicher
Forschung
insofern
verschoben
,
als
das
Ende
der
bipolar
en
Weltordnung
zugleich
auch
als
Ende
des
"kurzen
20
.
Jahrhunderts"
interpretiert
werden
konnte
. [G]
In
the
very
short
space
of
time
between
1989
and
1991
,
these
events
of
world
history
shifted
the
coordinates
of
research
into
contemporary
history
,
in
so
far
as
the
end
of
the
bipolar
world
order
could
also
at
the
same
time
be
interpreted
as
marking
the
end
of
the
"short
20th
century"
.
Es
beinhaltete
den
Eintritt
der
Vereinigten
Staaten
in
den
Ersten
Weltkrieg
,
die
russische
Oktoberrevolution
und
den
Beginn
einer
bipolar
en
Weltordnung
,
wie
sie
bis
zum
Ende
des
Kalten
Krieges
1989/1991
fortbestand
. [G]
It
was
the
year
of
the
United
States
entry
into
the
First
World
War
,
of
the
Russian
October
Revolution
and
of
the
beginning
of
the
bipolar
world
order
that
prevailed
until
the
Cold
War
ended
in
1989/1991
.
Anmerkung:
Nummer
3E003b
erfasst
nicht
"Technologie"
für
HEMT
(
high
electron
mobility
transistors
)
mit
Betriebsfrequenzen
kleiner
als
31
,8
GHz
sowie
HBT
(
hetero-
bipolar
transistors
)
mit
Betriebsfrequenzen
kleiner
als
31
,8
GHz
. [EU]
Note:
3E003
.b.
does
not
control
technology
for
high
electron
mobility
transistors
(HEMT)
operating
at
frequencies
lower
than
31
,8
GHz
and
hetero-junction
bipolar
transistors
(HBT)
operating
at
frequencies
lower
than
31
,8
GHz
.
Bipolar
e
Darlington-
oder
Hochfrequenztransistoren
(
HF-Transistoren
) [EU]
Bipolar
darlington
or
radio
frequency
(RF)
transistors
Bipolar
e
Sperrschicht-Transistoren
(
BJT
) [EU]
Bipolar
junction
transistors
(BJT)
Bipolar
e
Transistoren
mit
isoliertem
Gate
(
IGBT
) [EU]
Insulated
gate
bipolar
transistors
(IGBT)
BJTs
(
Bipolar
Junction
Transistors
) [EU]
Bipolar
Junction
Transistors
(BJTs)
Globales
Positionierungssystem
(
global
positioning
system
) [EU]
Hetero-
bipolar
transistors
Global
positioning
system
(
Globales
Positionierungssystem
) [EU]
Hetero-
bipolar
transistors
Halbleiterbauelemente
mit
heterogener
Struktur
, z.B.
HEMT
(
high
electron
mobility
transistors
),
HBT
(
hetero-
bipolar
transistors
),
quantum
well
devices
oder
super
lattice
devices
[EU]
Hetero-structure
semiconductor
devices
such
as
high
electron
mobility
transistors
(HEMT),
hetero-
bipolar
transistors
(HBT),
quantum
well
and
super
lattice
devices
Halbleiterbauelementen
mit
heterogener
Struktur
, z. B.
HEMT
(
high
electron
mobility
transistors
),
HBT
(
hetero-
bipolar
transistors
),
quantum
well
devices
oder
super
lattice
devices
[EU]
Hetero-structure
semiconductor
devices
such
as
high
electron
mobility
transistors
(HEMT),
hetero-
bipolar
transistors
(HBT),
quantum
well
and
super
lattice
devices
Hetero-
Bipolar
transistor
(
hetero-
bipolar
transistors
) [EU]
High
density
digital
recording
Hetero-
Bipolar
transistor
(
hetero-
bipolar
transistors
) [EU]
LIDAR
light
detection
and
ranging
LRU
line
replaceable
unit
MAC
Hetero-
bipolar
transistors
(
Hetero-
Bipolar
transistor
) [EU]
High
density
digital
recording
IGBTs
(
Insulated
Gate
Bipolar
Transistors
) [EU]
Insulated
Gate
Bipolar
Transistor
(IGBT)
Statischer
Umwandler
mit
einem
Leistungsschalter
mit
Isolierschicht-
Bipolar
transistoren
(
IGBTs
),
in
einem
Gehäuse
,
zur
Verwendung
beim
Herstellen
von
Mikrowellengeräten
der
Unterposition
85165000
[EU]
Static
converter
comprising
a
power
switch
with
insulated-gate
bipolar
transistors
(IGBTs),
contained
in
a
housing
,
for
use
in
the
manufacture
of
microwave
ovens
of
subheading
85165000
[1]
Stromrichter
mit
einem
Leistungsschalter
mit
Isolierschicht-
Bipolar
transistoren
(
IGBTs
),
in
einem
Gehäuse
,
zur
Verwendung
beim
Herstellen
von
Mikrowellengeräten
der
Unterposition
85165000
[EU]
Static
converter
comprising
a
power
switch
with
insulated-gate
bipolar
transistors
(IGBTs),
contained
in
a
housing
,
for
use
in
the
manufacture
of
microwave
ovens
of
subheading
85165000
[1]
The example sentences [G] were kindly provided by the
Goethe Institute
.
Sentences marked by [EU] derived from
DGT Multilingual Translation Memory
. The European Commission retains ownership of the copyright in the original data.
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